The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 Features • N-channel 2.5V, P-channel 1.8V drive avai.
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS1000EJ0101 Rev.1.01 Mar 04, 2013
Features
• N-channel 2.5V, P-channel 1.8V drive available
• Low on-state resistance N-channel ⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) ⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) P-channel ⎯ RDS (on)1 = 79 mΩ MAX. (VGS =
–4.5 V, ID =
–1.5 A) ⎯ RDS (on)2 = 105 mΩ MAX. (VGS =
–2.5 V, ID =
–1.5 A) ⎯ RDS (on)3 = 182 mΩ MAX. (VGS =
–1.8 V, ID =
–1.5 A)
• Built-in gate protection diode
• Lead-fr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2600T1R |
Renesas |
N-CHANNEL MOSFET | |
2 | UPA2630T1R |
Renesas |
P-CHANNEL MOSFET | |
3 | UPA2631T1R |
Renesas |
P-CHANNEL MOSFET | |
4 | UPA2650T1E |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
5 | UPA2660T1R |
Renesas |
DUAL N-CHANNEL MOSFET | |
6 | UPA2670T1R |
Renesas |
DUAL P-CHANNEL MOSFET | |
7 | UPA2672T1R |
Renesas |
DUAL P-CHANNEL MOSFET | |
8 | UPA2680T1E |
NEC |
MOSFET | |
9 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
10 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2004C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |