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UPA2660T1R - Renesas

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UPA2660T1R DUAL N-CHANNEL MOSFET

The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 Features • DS MAXIMUM RATINGS 20V(TA = 25°C) • 2.5V drive a.

Features

a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 Features
• DS MAXIMUM RATINGS 20V(TA = 25°C)
• 2.5V drive available
• Low on-state resistance ⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) ⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
• Built-in gate protection diode
• Lead-free and Halogen-free 6pinHUSON2020(Dual) Ordering Information Part Number Package 6pinHUSON2020(Dual) Note: ∗1.Pb-free (This product does not contain Pb in the external el.

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