The μ PA2650T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2650T1E contains dual MOSFET which features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 MOSFET1 2 5 1 3 4 MOSFET2 F.
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converter of portable machine and so on.
PIN CONNECTION (Top View)
6 MOSFET1 2 5
1
3
4 MOSFET2
FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET MOSFET1 RDS(on)1 = 48 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 55 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) MOSFET2 RDS(on)1 = 50 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 57 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
1: Gate1 2: Drain1/Source2 (Heat sink2) 3: Gate2 4: Drain2 (Heat sink1) 5: Drain1/Source2 (Heat sink2) 6: S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2600T1R |
Renesas |
N-CHANNEL MOSFET | |
2 | UPA2630T1R |
Renesas |
P-CHANNEL MOSFET | |
3 | UPA2631T1R |
Renesas |
P-CHANNEL MOSFET | |
4 | UPA2660T1R |
Renesas |
DUAL N-CHANNEL MOSFET | |
5 | UPA2670T1R |
Renesas |
DUAL P-CHANNEL MOSFET | |
6 | UPA2672T1R |
Renesas |
DUAL P-CHANNEL MOSFET | |
7 | UPA2680T1E |
NEC |
MOSFET | |
8 | UPA2690T1R |
Renesas |
COMPLEMENTARY MOSFET | |
9 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
10 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2004C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |