logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preview

UPA2650T1E - NEC

Download Datasheet
Stock / Price

UPA2650T1E MOS FIELD EFFECT TRANSISTOR

The μ PA2650T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2650T1E contains dual MOSFET which features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 MOSFET1 2 5 1 3 4 MOSFET2 F.

Features

a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 MOSFET1 2 5 1 3 4 MOSFET2 FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET MOSFET1 RDS(on)1 = 48 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 55 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) MOSFET2 RDS(on)1 = 50 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 57 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) 1: Gate1 2: Drain1/Source2 (Heat sink2) 3: Gate2 4: Drain2 (Heat sink1) 5: Drain1/Source2 (Heat sink2) 6: S.

Related Product

No. Partie # Fabricant Description Fiche Technique
1 UPA2600T1R
Renesas
N-CHANNEL MOSFET Datasheet
2 UPA2630T1R
Renesas
P-CHANNEL MOSFET Datasheet
3 UPA2631T1R
Renesas
P-CHANNEL MOSFET Datasheet
4 UPA2660T1R
Renesas
DUAL N-CHANNEL MOSFET Datasheet
5 UPA2670T1R
Renesas
DUAL P-CHANNEL MOSFET Datasheet
6 UPA2672T1R
Renesas
DUAL P-CHANNEL MOSFET Datasheet
7 UPA2680T1E
NEC
MOSFET Datasheet
8 UPA2690T1R
Renesas
COMPLEMENTARY MOSFET Datasheet
9 UPA2001C
NEC
NPN Silicon Epitaxial Darlington Transistor Array Datasheet
10 UPA2002C
NEC
NPN Silicon Epitaxial Darlington Transistor Array Datasheet
11 UPA2003C
NEC
NPN Silicon Epitaxial Darlington Transistor Array Datasheet
12 UPA2004C
NEC
NPN Silicon Epitaxial Darlington Transistor Array Datasheet
More datasheet from NEC
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact