UPA2680T1E - NEC

UPA2680T1E MOSFET

The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNE.

Features

a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 5 4 FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
• Low forward voltage Schottky Barrier Diode VF = 0.36 V TYP. (IF = 1.0 A) 1 2 3 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: An.