The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Features • High Drain to Source Voltage ⎯ VDSS = 20 V (VGS = 0 V.
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0998EJ0100 Rev.1.00 Jan 15, 2013
Features
• High Drain to Source Voltage ⎯ VDSS = 20 V (VGS = 0 V, TA = 25°C)
• 2.5V drive available
• Low on-state resistance ⎯ RDS (on)1 = 13.8 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) ⎯ RDS (on)2 = 19.1 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020
Ordering Information
Part Number Package 6pinHUSON2020 Note: ∗1.Pb-free (This product does not cont.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2630T1R |
Renesas |
P-CHANNEL MOSFET | |
2 | UPA2631T1R |
Renesas |
P-CHANNEL MOSFET | |
3 | UPA2650T1E |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
4 | UPA2660T1R |
Renesas |
DUAL N-CHANNEL MOSFET | |
5 | UPA2670T1R |
Renesas |
DUAL P-CHANNEL MOSFET | |
6 | UPA2672T1R |
Renesas |
DUAL P-CHANNEL MOSFET | |
7 | UPA2680T1E |
NEC |
MOSFET | |
8 | UPA2690T1R |
Renesas |
COMPLEMENTARY MOSFET | |
9 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
10 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2004C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |