Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET .
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.4Ω
• Ultra Low Gate Charge (typ. Qg = 30nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avala.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP12N60M |
Truesemi |
600V N-Channel MOSFET |
|
| 2 | TSP12N65M |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP120A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 4 | TSP120B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 5 | TSP120C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 6 | TSP120SA |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 7 | TSP120SB |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 8 | TSP120SC |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 9 | TSP12U120S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 10 | TSP1-WF1608H6-CRSM |
TAITRON |
0603 Package 0.6mm Height Flat Top LED |
|
| 11 | TSP1-XF1005H5A6 |
TAITRON |
0402 Package 0.45mm Height Super Yellow LED |
|
| 12 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|