This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp.
- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP12N60MS |
Truesemi |
N-Channel MOSFET | |
2 | TSP12N65M |
Truesemi |
N-Channel MOSFET | |
3 | TSP120A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
4 | TSP120B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
5 | TSP120C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
6 | TSP120SA |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
7 | TSP120SB |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
8 | TSP120SC |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
9 | TSP12U120S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
10 | TSP1-WF1608H6-CRSM |
TAITRON |
0603 Package 0.6mm Height Flat Top LED | |
11 | TSP1-XF1005H5A6 |
TAITRON |
0402 Package 0.45mm Height Super Yellow LED | |
12 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier |