Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 14 12 10 8 6 4 WITH HEATSINK 2 30mm x 30mm 4 oz. pad PCB 0 100 110 120 130 140 LEAD TEMPERATURE (oC) 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 10 TJ=150°C TJ=1.
- Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC TO-277A (SMPC) - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANIC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP120A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
2 | TSP120B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
3 | TSP120C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
4 | TSP120SA |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
5 | TSP120SB |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
6 | TSP120SC |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
7 | TSP12N60M |
Truesemi |
600V N-Channel MOSFET | |
8 | TSP12N60MS |
Truesemi |
N-Channel MOSFET | |
9 | TSP12N65M |
Truesemi |
N-Channel MOSFET | |
10 | TSP1-WF1608H6-CRSM |
TAITRON |
0603 Package 0.6mm Height Flat Top LED | |
11 | TSP1-XF1005H5A6 |
TAITRON |
0402 Package 0.45mm Height Super Yellow LED | |
12 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier |