This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 12.0A, 650V, RDS(on) = 0.750 @VGS = 10 V
• Low gate charge ( typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GDS
TO-220
GD S
TO-220F
●
◀▲ G
●
●
S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Singl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP12N60M |
Truesemi |
600V N-Channel MOSFET | |
2 | TSP12N60MS |
Truesemi |
N-Channel MOSFET | |
3 | TSP120A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
4 | TSP120B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
5 | TSP120C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
6 | TSP120SA |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
7 | TSP120SB |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
8 | TSP120SC |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
9 | TSP12U120S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
10 | TSP1-WF1608H6-CRSM |
TAITRON |
0603 Package 0.6mm Height Flat Top LED | |
11 | TSP1-XF1005H5A6 |
TAITRON |
0402 Package 0.45mm Height Super Yellow LED | |
12 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier |