TSM210N06 Taiwan Semiconductor N-Channel Power MOSFET Datasheet, en stock, prix

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TSM210N06

Taiwan Semiconductor
TSM210N06
TSM210N06 TSM210N06
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Part Number TSM210N06
Manufacturer Taiwan Semiconductor
Description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liabil...
Features
● Advanced Trench Technology
● Low RDS(ON) 3.1mΩ (Max.)
● Low gate charge typical @ 160nC (Typ.)
● Low Crss typical @ 300pF (Typ.) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.3mH IAS, IAR Avalanche Energy, L=0.3mH EAS, EAR TC=25°C Maximum Power Dissipation TC=70°C ...

Document Datasheet TSM210N06 Data Sheet
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