TSM210N06 |
Part Number | TSM210N06 |
Manufacturer | Taiwan Semiconductor |
Description | only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liabil... |
Features |
● Advanced Trench Technology ● Low RDS(ON) 3.1mΩ (Max.) ● Low gate charge typical @ 160nC (Typ.) ● Low Crss typical @ 300pF (Typ.) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.3mH IAS, IAR Avalanche Energy, L=0.3mH EAS, EAR TC=25°C Maximum Power Dissipation TC=70°C ... |
Document |
TSM210N06 Data Sheet
PDF 56.56KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSM210N02CX |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
2 | TSM200 |
SPSEMI |
Surface Mount Devices | |
3 | TSM200N03D |
Taiwan Semiconductor |
Dual N-Channel MOSFET | |
4 | TSM20N50 |
Taiwan Semiconductor |
500V N-Channel Power MOSFET | |
5 | TSM20N50CN |
Taiwan Semiconductor |
500V N-Channel Power MOSFET |