This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
• Low gate charge ( typical 9nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• ESD improved capability
• Improved dv/dt capability
GDS
TO-220
GD S
TO-220F
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF2N60M |
Truesemi |
600V N-Channel MOSFET | |
2 | TSF2N70M |
Truesemi |
N-Channel MOSFET | |
3 | TSF204D00-S1 |
Token |
Saw Filters | |
4 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | TSF20H100C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
6 | TSF20H120C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | TSF20H120C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
8 | TSF20H150C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
9 | TSF20L100C |
INCHANGE |
Schottky Barrier Rectifier | |
10 | TSF20L120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
11 | TSF20L150C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
12 | TSF20L200C |
Taiwan Semiconductor |
Trench Schottky Rectifier |