TK40J60T - Toshiba Semiconductor

TK40J60T N-Channel MOSFET

TK40J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) www.DataSheet4U.com TK40J60T Switching Regulator Applications 15.9max. Ф3.2±0.2 1.0 4.5 9.0 Unit: mm 3.3max. Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rat.

Features

the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.313 50 Unit 2 °C/W °C/W Note 1: Plea.