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TK40E06N1 |
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| Part Number | TK40E06N1 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK40E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK40E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 ... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (... |
| Document |
 TK40E06N1 Data Sheet
PDF 246.34KB |
| Distributor | Stock | Price | Buy |
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