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TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK3A65DA Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 2.3 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ф3.2 ±.
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TK3A65DA - INCHANGE
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK3A65DA，ITK3A65DA ·FEATURES ·Low drain-source on-resistance: RD.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK3A65D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK3A65D |
INCHANGE |
N-Channel MOSFET |
|
| 3 | TK3A60DA |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 4 | TK3A60DA |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK3A |
Topstek |
Current Transducer |
|
| 6 | TK3A90E |
INCHANGE |
N-Channel MOSFET |
|
| 7 | TK3A90E |
Toshiba |
N-Channel MOSFET |
|
| 8 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 9 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | TK30A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 12 | TK30E06N1 |
INCHANGE |
N-Channel MOSFET |
|