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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK3A60DA，ITK3A60DA ·FEATURES ·Low drain-source on-resistance: RDS(on) = 2.2Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE.
·Low drain-source on-resistance:
RDS(on) = 2.2Ω (typ.)
·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
2.5
IDM
Drain Current-Single Pulsed
10
PD
Total Dissipation @TC=25℃
30
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
.
TK3A60DA - Toshiba Semiconductor
TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK3A60DA Switching Regulator Applications .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK3A65D |
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| 2 | TK3A65D |
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| 3 | TK3A65DA |
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| 4 | TK3A65DA |
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| 5 | TK3A |
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| 7 | TK3A90E |
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| 8 | TK30A06J3A |
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| 9 | TK30A06N1 |
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| 10 | TK30A06N1 |
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| 11 | TK30E06N1 |
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| 12 | TK30E06N1 |
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