TK3A65DA |
Part Number | TK3A65DA |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK3A65DA,ITK3A65DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.3Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ... |
Features |
·Low drain-source on-resistance: RDS(ON) = 2.3Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 2.5 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
Document |
TK3A65DA Data Sheet
PDF 247.54KB |
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