TK3A90E - Toshiba

TK3A90E N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (π-MOS) TK3A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK3A90E 1 : Gate 2 : Drain 3 :.

Features

(1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK3A90E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Chann.