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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30A06N1，ITK30A06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 12.2mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg.
·Low drain-source on-resistance:
RDS(ON) = 12.2mΩ (typ.) (VGS = 10 V)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
95
PD
Total Dissipation @TC=25℃
25
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V.
TK30A06N1 - Toshiba Semiconductor
MOSFETs Silicon N-channel MOS (U-MOS-H) TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low dr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 2 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK30E06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK30J25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | TK30J25D |
INCHANGE |
N-Channel MOSFET |
|
| 6 | TK30S06K3L |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | TK31A60W |
Toshiba |
Silicon N-Channel MOSFET |
|
| 8 | TK31A60W |
INCHANGE |
N-Channel MOSFET |
|
| 9 | TK31E60W |
Toshiba |
Silicon N-Channel MOSFET |
|
| 10 | TK31E60W |
INCHANGE |
N-Channel MOSFET |
|
| 11 | TK31E60X |
Toshiba |
Silicon N-Channel MOSFET |
|
| 12 | TK31J60W |
Toshiba |
Silicon N-Channel MOSFET |
|