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Isc N-Channel MOSFET Transistor TK35N65W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 57mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .
·Low drain-source on-resistance:
RDS(ON) = 57mΩ (MAX)
·Enhancement mode:
Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
49.2
A
IDM
Drain Current-Single Pulsed
196
A
PD
Total Dissipation @TC=25℃
400
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~.
TK35N65W5 - Toshiba Semiconductor
TK35N65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK35N65W5 1. Applications • Switching Voltage Regulators 2. Features .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK35N65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK35N65W |
INCHANGE |
N-Channel MOSFET |
|
| 3 | TK35A08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK35A08N1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK35A65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 6 | TK35A65W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | TK35A65W5 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | TK35E08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | TK35E08N1 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | TK35S04K3L |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 12 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|