TK35A65W5 - Toshiba Semiconductor

TK35A65W5 Silicon N-Channel MOSFET

TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK35A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V,.

Features

(1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK35A65W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-p.