TK35N65W5 |
Part Number | TK35N65W5 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor TK35N65W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 57mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lo... |
Features |
·Low drain-source on-resistance: RDS(ON) = 57mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 49.2 A IDM Drain Current-Single Pulsed 196 A PD Total Dissipation @TC=25℃ 400 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~... |
Document |
TK35N65W5 Data Sheet
PDF 395.86KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK35N65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TK35N65W |
INCHANGE |
N-Channel MOSFET | |
3 | TK35N65W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TK35A08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK35A08N1 |
INCHANGE |
N-Channel MOSFET |