MOSFETs Silicon N-channel MOS (U-MOS) TK35S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10.
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK35S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2014-08-04 Rev.5.0 TK35S04K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK35A08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TK35A08N1 |
INCHANGE |
N-Channel MOSFET | |
3 | TK35A65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TK35A65W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK35A65W5 |
INCHANGE |
N-Channel MOSFET | |
6 | TK35E08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TK35E08N1 |
INCHANGE |
N-Channel MOSFET | |
8 | TK35N65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK35N65W |
INCHANGE |
N-Channel MOSFET | |
10 | TK35N65W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TK35N65W5 |
INCHANGE |
N-Channel MOSFET | |
12 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |