TK35A65W5 |
Part Number | TK35A65W5 |
Manufacturer | INCHANGE |
Description | INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A65W5,ITK35A65W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.08Ω (typ.) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA)... |
Features |
·Low drain-source on-resistance: RDS(ON) = 0.08Ω (typ.) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 50 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
Document |
TK35A65W5 Data Sheet
PDF 248.50KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK35A65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TK35A65W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK35A08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TK35A08N1 |
INCHANGE |
N-Channel MOSFET | |
5 | TK35E08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |