MOSFETs Silicon N-Channel MOS (π-MOS) TK30J25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK30J25D 1: Gate (G) 2: Drain (D).
(1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK30J25D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse.
iscN-Channel MOSFET Transistor TK30J25D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 60mΩ (MAX.) (VGS = 10 V) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET | |
2 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK30A06N1 |
INCHANGE |
N-Channel MOSFET | |
4 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK30E06N1 |
INCHANGE |
N-Channel MOSFET | |
6 | TK30S06K3L |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TK31A60W |
Toshiba |
Silicon N-Channel MOSFET | |
8 | TK31A60W |
INCHANGE |
N-Channel MOSFET | |
9 | TK31E60W |
Toshiba |
Silicon N-Channel MOSFET | |
10 | TK31E60W |
INCHANGE |
N-Channel MOSFET | |
11 | TK31E60X |
Toshiba |
Silicon N-Channel MOSFET | |
12 | TK31J60W |
Toshiba |
Silicon N-Channel MOSFET |