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TK30J25D |
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| Part Number | TK30J25D |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor TK30J25D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 60mΩ (MAX.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche test... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 60mΩ (MAX.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 260 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Tem... |
| Document |
 TK30J25D Data Sheet
PDF 277.38KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK30J25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 3 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK30A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|