MOSFETs Silicon N-channel MOS (U-MOS) TK30S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 .
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK30S06K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2014-08-04 Rev.5.0 TK30S06K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET | |
2 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK30A06N1 |
INCHANGE |
N-Channel MOSFET | |
4 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK30E06N1 |
INCHANGE |
N-Channel MOSFET | |
6 | TK30J25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TK30J25D |
INCHANGE |
N-Channel MOSFET | |
8 | TK31A60W |
Toshiba |
Silicon N-Channel MOSFET | |
9 | TK31A60W |
INCHANGE |
N-Channel MOSFET | |
10 | TK31E60W |
Toshiba |
Silicon N-Channel MOSFET | |
11 | TK31E60W |
INCHANGE |
N-Channel MOSFET | |
12 | TK31E60X |
Toshiba |
Silicon N-Channel MOSFET |