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isc N-Channel MOSFET Transistor TK31J60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=15.4A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA.
·Low drain-source on-resistance:
RDS(on) ≤0.088Ω.
·Enhancement mode:
Vth =2.7 to 3.7V (VDS = 10 V, ID=15.4A)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
30.8
A
IDM
Drain Current-Single Pulsed
123
A
PD
Total Dissipation @TC=25℃
230
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150.
TK31J60W - Toshiba
TK31J60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK31J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK31J60W5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | TK31A60W |
Toshiba |
Silicon N-Channel MOSFET |
|
| 4 | TK31A60W |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK31E60W |
Toshiba |
Silicon N-Channel MOSFET |
|
| 6 | TK31E60W |
INCHANGE |
N-Channel MOSFET |
|
| 7 | TK31E60X |
Toshiba |
Silicon N-Channel MOSFET |
|
| 8 | TK31N60W |
Toshiba |
Silicon N-Channel MOSFET |
|
| 9 | TK31N60W |
INCHANGE |
N-Channel MOSFET |
|
| 10 | TK31N60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | TK31N60W5 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | TK31N60X |
Toshiba |
Silicon N-Channel MOSFET |
|