TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) .
Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and in.
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK13A65U,ITK13A65U ·FEATURES ·Low drain-source on-resistance: RD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK13A65D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TK13A65D |
INCHANGE |
N-Channel MOSFET | |
3 | TK13A60D |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | TK13A60D |
INCHANGE |
N-Channel MOSFET | |
5 | TK13A60W |
INCHANGE |
N-Channel MOSFET | |
6 | TK13A25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TK13A25D |
INCHANGE |
N-Channel MOSFET | |
8 | TK13A45D |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | TK13A45D |
INCHANGE |
N-Channel MOSFET | |
10 | TK13A50D |
Toshiba |
Silicon N-Channel MOSFET | |
11 | TK13A50DA |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | TK13A50DA |
INCHANGE |
N-Channel MOSFET |