TK13A65U |
Part Number | TK13A65U |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK13A65U,ITK13A65U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.32Ω (typ.) ·Low leakage current: IDSS = 100μA (max) (VDS = 650 V) ·Enh... |
Features |
·Low drain-source on-resistance: RDS(ON) = 0.32Ω (typ.) ·Low leakage current: IDSS = 100μA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Ts... |
Document |
TK13A65U Data Sheet
PDF 248.09KB |
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