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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK13A60D，ITK13A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.33Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUT.
·Low drain-source on-resistance:
RDS(ON) = 0.33Ω (typ.)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
13
IDM
Drain Current-Single Pulsed
52
PD
Total Dissipation @TC=25℃
50
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
.
TK13A60D - Toshiba Semiconductor
www.DataSheet4U.com TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching R.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK13A60W |
INCHANGE |
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|
| 2 | TK13A65D |
Toshiba Semiconductor |
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|
| 3 | TK13A65D |
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| 4 | TK13A65U |
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| 5 | TK13A65U |
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| 6 | TK13A25D |
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| 7 | TK13A25D |
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| 8 | TK13A45D |
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| 9 | TK13A45D |
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| 10 | TK13A50D |
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| 11 | TK13A50DA |
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| 12 | TK13A50DA |
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|