TK13A50DA - Toshiba Semiconductor

TK13A50DA N-Channel MOSFET

TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A50DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Uni.

Features

the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel.