isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.
·With TO-220F packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
13
IDM
Drain Current-Single Pulsed
52
PD
Total Dissipation
50
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK13A60D |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | TK13A60D |
INCHANGE |
N-Channel MOSFET | |
3 | TK13A65D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TK13A65D |
INCHANGE |
N-Channel MOSFET | |
5 | TK13A65U |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | TK13A65U |
INCHANGE |
N-Channel MOSFET | |
7 | TK13A25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | TK13A25D |
INCHANGE |
N-Channel MOSFET | |
9 | TK13A45D |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | TK13A45D |
INCHANGE |
N-Channel MOSFET | |
11 | TK13A50D |
Toshiba |
Silicon N-Channel MOSFET | |
12 | TK13A50DA |
Toshiba Semiconductor |
N-Channel MOSFET |