TK13A60D |
Part Number | TK13A60D |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK13A60D,ITK13A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.33Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)... |
Features |
·Low drain-source on-resistance: RDS(ON) = 0.33Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 50 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
Document |
TK13A60D Data Sheet
PDF 247.85KB |
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