TED1802 - Toshiba

TED1802 Silicon PNP Transistor

TED1802 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIAER APPLICATIONS. FEATURES . High hpE : hFE=106~300 . 1W Output Applications. . Complementary to TED1702. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Col.

Features

. High hpE : hFE=106~300 . 1W Output Applications. . Complementary to TED1702. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO v EBO ic IE PC L stg -35 -30 -5 -800 mA 800 mA 600 mW 150 -65-150 °C 1. COLLECTOR 2. BASF, a EMITTER EI AJ TOSHIBA Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off .