TED1502 - Toshiba

TED1502 Silicon NPN Transistor

: TED1502 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. FEATURES . Small Reverse Transfer Capacitance : C re =0.7pF (Typ.) . Low Noise Figure : NF=2.5dB (Typ.) (f=100MHz) .5.1 MAX Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage .

Features

. Small Reverse Transfer Capacitance : C re =0.7pF (Typ.) . Low Noise Figure : NF=2.5dB (Typ.) (f=100MHz) .5.1 MAX Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tstj RATING 40 30 UNIT 30 mA -30 mA 250 mW 125 °C -65-125 JEDEC 1. COLLECTOR Z. BASE 3. EMITTER TO-92 TOSHIBA Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off.