TED1702 - Toshiba

TED1702 Silicon NPN Transistor

TED1702 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High h FE : h FE=106~300 . 1 Watts Amplifier Applications. . Complementary to TED1802 5.1 MAX. Unit in mm ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 35 UNIT Collector-Emitter Voltage VCEO 30 Emitter-Base Volt.

Features

. High h FE : h FE=106~300 . 1 Watts Amplifier Applications. . Complementary to TED1802 5.1 MAX. Unit in mm ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 35 UNIT Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage VEBO Collector Current 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 600 mW Junction Temperature 150 1. COLLECTOR 2. BASES 3. KMITTEK Storage Temperature Range r s tg -65-150 ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : 0.21g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Coll.