TED1402 - Toshiba

TED1402 Silicon NPN Transistor

: ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TED1402 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : V CEO =50V(Min.), I c =150mA(Max. . Excellent hp£ Linearity : hFE(IC=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=ld3(Typ. ) at f=lkHz . Complementary to TED1602. .

Features

. High Voltage and High Current : V CEO =50V(Min.), I c =150mA(Max. . Excellent hp£ Linearity : hFE(IC=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=ld3(Typ. ) at f=lkHz . Complementary to TED1602. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 60 Collector-Emitter Voltage VCEO 50 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation v EBO ic IB PC 150 mA 50 mA 400 mW 1. COLLECTOR Z. BASE 3. EMITTER Junction Temperature 125 Storage Temperature Range L stg ELECTRICAL CHARACTERISTICS (Ta=25°C).