TED1602 - Toshiba

TED1602 Silicon PNP Transistor

TED1602 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : VcEO=-50V(Min.), I c=-150mA(Max. . Excellent hpE Linearity : hFE (Ic=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=1.8dB(Typ . ) at f=lkHz . Complementary to TED1402 Unit.

Features

. High Voltage and High Current : VcEO=-50V(Min.), I c=-150mA(Max. . Excellent hpE Linearity : hFE (Ic=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=1.8dB(Typ . ) at f=lkHz . Complementary to TED1402 Unit in mm ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic IB PC L stg RATING UNIT -50 V -50 -5 -150 mA -50 mA 400 mW 125 -65-125 1. COLLECTOR 2. BASE 3. EMITTER TO-92 SC-43 Weight : 0..