TC58DVM92A5TAI0 - Toshiba

TC58DVM92A5TAI0 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM

The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase opera.

Features

• Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read
• Mode control Serial input/output Command control
• Power supply VCC = 2.7 V to 3.6 V
• Access time Cell array to register 25 μs max Serial Read Cycle 40 ns min
• Program/Erase time Auto Page Program 300 μs/page typ. Auto Block Erase 2.5 ms/block typ.
• Operating current Read (40 ns cycle) Program (avg.) Erase (avg.) Standby 20 mA max. 20 mA max. 20 mA max. 50 μA max
• Package TSOPI48-P-1220-0.50.