Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The TC58DVG3S0E is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has two 4224-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4224-byte increment.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC58DVG02A1F00 |
Toshiba |
1 Gbit (128M x *8its) CMOS NAND EPROM |
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| 2 | TC58DVG02A1FI0 |
Toshiba |
1 Gbit (128M x *8its) CMOS NAND EPROM |
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| 3 | TC58DVG02A1FT00 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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| 4 | TC58DVM72A1FT00 |
Toshiba |
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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| 5 | TC58DVM72F1FT00 |
Toshiba |
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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| 6 | TC58DVM82A1FT00 |
Toshiba Semiconductor |
256-MBIT (32M x 8 BITS) CMOS NAND E2PROM |
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| 7 | TC58DVM92A1FT0 |
Toshiba |
512M-Bit CMOS NAND EPROM |
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| 8 | TC58DVM92A1FT00 |
Toshiba |
512M-Bit CMOS NAND EPROM |
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| 9 | TC58DVM92A5TA00 |
Toshiba |
512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
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| 10 | TC58DVM92A5TAI0 |
Toshiba |
512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
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| 11 | TC58DAM72A1FT00 |
Toshiba |
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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| 12 | TC58DAM72F1FT00 |
Toshiba |
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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