< TB6562ANG > Pin No. Symbol Function Description Remarks 1 GND Ground pin 2 Vreg 5 V output pin 3 SB Standby pin Connect a capacitor between this pin and the GND pin. H: start, L: Standby, Built-in pull down resistance of 100 kΩ (typ.) 4 Phase A Rotation direction control pin (Ch. A) Apply a 0 V/5 V signal, Built-in pull down resistance of 10.
2-phase/1
–2-phase/W 1
–2-phase excitation PWM current control Power supply voltage: 40 V (max) Output current: 1.5 A (max) Low ON-resistance: 1.5 Ω (upper and lower transistors/typ.) Power-saving function Overcurrent protection: ILIM = 2.5 A (typ.) Thermal shutdown Package: TB6562ANG; SDIP24-P-300-1.78
TB6562AFG; SSOP30-P-375-1.00
TB6562ANG
TB6562AFG
SSOP30-P-375-1.00
Weight: SDIP24-P-300-1.78: 1.62 g (typ.) SSOP30-P-375-1.00: 0.63 g (typ.)
This product has a MOS structure and is sensitive to electrostatic discharge. When handling the product, ensure that the environment is protected against .
No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | TB6562AFG |
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2 | TB6560-3N |
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3 | TB6560AFG |
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4 | TB6560AFTG |
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5 | TB6560AHQ |
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6 | TB6560FG |
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7 | TB6560HQ |
Toshiba Semiconductor |
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8 | TB6561FG |
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9 | TB6561NG |
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10 | TB6564AHQ |
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11 | TB6568KQ |
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12 | TB6569FG |
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