TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature.
·
·
· Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operating supply voltage: VCC = 1.5~2.2 V
Maximum Ratings (Ta = 25°C)
Characteristics Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature (Note1) (Note2) Symbol VCC1 VCC2 PD Topr Tstg Rating 2.2 3 300 -40~85 -55~150 Unit V V mW °C °C
Weight: 0.003 g (typ.)
Note1: Note2:
When VCC is operated at less than 1/4 duty cycle When mounted on the glass epoxy of 2.5 cm ´ 1.6 t
2
Marking
OUT 5 COLLECTOR 4
U4
1 2 3 VCC GND IN
1
2002-01-18
TA4012AFE
Electrical Characteristics (Ta = 25°.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TA4012F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
2 | TA4012FU |
Toshiba Semiconductor |
UHF WIDE-BAND AMPLIFIER | |
3 | TA4011AFE |
Toshiba Semiconductor |
UHF Wide-Band Amplifier | |
4 | TA4011F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
5 | TA4011FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
6 | TA4013F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
7 | TA4013FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
8 | TA4016AFE |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
9 | TA4017FT |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
10 | TA4018F |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
11 | TA4019F |
Toshiba Semiconductor |
UHF Wide Band Amplifier Applications | |
12 | TA4000F |
Toshiba Semiconductor |
VHF - UHF WIDE BAND AMPLIFIER |