TA4019F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4019F UHF Wide Band Amplifier Applications Features · · · High gain: |S21|2 = 30dB (@45 MHz) Low distortion: IM3 = 53dB (@45 MHz) Operating supply voltage: VCC = 4.75 V~5.25 V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Total power dissipation Operating temperature Storag.
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· High gain: |S21|2 = 30dB (@45 MHz) Low distortion: IM3 = 53dB (@45 MHz) Operating supply voltage: VCC = 4.75 V~5.25 V
Maximum Ratings (Ta = 25°C)
Characteristics Supply voltage Total power dissipation Operating temperature Storage temperature Symbol VCC PD (Note 1) Topr Tstg 2 Rating 5.5 550 -40~85 -55~150 Unit V mW °C °C
Weight:
0.02g (typ.)
Note 1: When mounted on the glass epoxy 2.5cm ´ 0.4 t
Pin Assignment
VCC GND OUT OUT (1) (2) 8 7 6 5
4019F
1
2
3
4
IN (1)IN (2)MGC MGC (1) (2)
1
2003-03-12
TA4019F
Electrical Characteristics (Ta = 25°C, VCC = 5 V, Zg = Zl = 50 W)
Chara.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TA4011AFE |
Toshiba Semiconductor |
UHF Wide-Band Amplifier | |
2 | TA4011F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
3 | TA4011FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
4 | TA4012AFE |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
5 | TA4012F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
6 | TA4012FU |
Toshiba Semiconductor |
UHF WIDE-BAND AMPLIFIER | |
7 | TA4013F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
8 | TA4013FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
9 | TA4016AFE |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
10 | TA4017FT |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
11 | TA4018F |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
12 | TA4000F |
Toshiba Semiconductor |
VHF - UHF WIDE BAND AMPLIFIER |