TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011F UHF Wide Band Amplifier Applications Features · Low current: ICC = 3.5 mA · Wide band: f = 2.4 GHz (3dB down) · Operating supply voltage: VCC = 1.5~3 V TA4011F Maximum Ratings (Ta = 25°C) Weight: 0.014 g (typ.) Characteristics Symbol Rating Supply voltage 1 Supply voltage 2 Total pow.
· Low current: ICC = 3.5 mA
· Wide band: f = 2.4 GHz (3dB down)
· Operating supply voltage: VCC = 1.5~3 V
TA4011F
Maximum Ratings (Ta = 25°C)
Weight: 0.014 g (typ.)
Characteristics
Symbol
Rating
Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature
(Note 1) (Note 2)
VCC1 VCC2
PD Topr Tstg
3.2 4 300 -40~85 -55~150
Note 1: When VCC is operated at less than 1/4 duty cycle. Note 2: When mounted on the glass epoxy of 2.5 cm2 ´ 1.6 t
Unit
V V mW °C °C
Pin Assignment
Caution
This device electrostatic sensitivity. Please handle with caution.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TA4011AFE |
Toshiba Semiconductor |
UHF Wide-Band Amplifier | |
2 | TA4011FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
3 | TA4012AFE |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
4 | TA4012F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
5 | TA4012FU |
Toshiba Semiconductor |
UHF WIDE-BAND AMPLIFIER | |
6 | TA4013F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
7 | TA4013FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
8 | TA4016AFE |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
9 | TA4017FT |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
10 | TA4018F |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
11 | TA4019F |
Toshiba Semiconductor |
UHF Wide Band Amplifier Applications | |
12 | TA4000F |
Toshiba Semiconductor |
VHF - UHF WIDE BAND AMPLIFIER |