TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Features z Low current: ICC = 6.5 mA z Wide band: f = 2.0 GHz (3dB down) z Operatin supply voltage: VCC = 1.5 to 2.2 V Pin Assignment Absolute Maximum Ratings (Ta = 25°C) Weight: 0.006 g (typ.) Characteristic Symbol Rating Unit Supply .
z Low current: ICC = 6.5 mA z Wide band: f = 2.0 GHz (3dB down) z Operatin supply voltage: VCC = 1.5 to 2.2 V Pin Assignment Absolute Maximum Ratings (Ta = 25°C) Weight: 0.006 g (typ.) Characteristic Symbol Rating Unit Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature VCC1 2.2 V VCC2 (Note 1) 3 V PD (Note 2) 300 mW Topr −40 to 85 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TA4012F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
2 | TA4012AFE |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
3 | TA4011AFE |
Toshiba Semiconductor |
UHF Wide-Band Amplifier | |
4 | TA4011F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
5 | TA4011FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
6 | TA4013F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
7 | TA4013FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
8 | TA4016AFE |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
9 | TA4017FT |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
10 | TA4018F |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic | |
11 | TA4019F |
Toshiba Semiconductor |
UHF Wide Band Amplifier Applications | |
12 | TA4000F |
Toshiba Semiconductor |
VHF - UHF WIDE BAND AMPLIFIER |