TA4012AFE |
Part Number | TA4012AFE |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operat... |
Features |
· · · Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature (Note1) (Note2) Symbol VCC1 VCC2 PD Topr Tstg Rating 2.2 3 300 -40~85 -55~150 Unit V V mW °C °C Weight: 0.003 g (typ.) Note1: Note2: When VCC is operated at less than 1/4 duty cycle When mounted on the glass epoxy of 2.5 cm ´ 1.6 t 2 Marking OUT 5 COLLECTOR 4 U4 1 2 3 VCC GND IN 1 2002-01-18 TA4012AFE Electrical Characteristics (Ta = 25°... |
Document |
TA4012AFE Data Sheet
PDF 58.75KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TA4012F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
2 | TA4012FU |
Toshiba Semiconductor |
UHF WIDE-BAND AMPLIFIER | |
3 | TA4011AFE |
Toshiba Semiconductor |
UHF Wide-Band Amplifier | |
4 | TA4011F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS | |
5 | TA4011FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS |