SiZF918DT - Vishay

SiZF918DT Dual N-Channel MOSFET

www.vishay.com SiZF918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.0040 0.0019 0.0067 0.0027 7 17.3 40 60 Dual FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low s.

Features

• TrenchFET® Gen IV power MOSFET
• SkyFET® low side MOSFET with integrated Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• CPU core power N-Channel 1 MOSFET
• Computer / server peripherals GHS/G1
• POL
• Synchronous buck converter G1Return/S1
• Telecom DC/DC VIN/D1 VSW/S1-D2 GLS/G2 Schottky Diode N-Channel 2 MOSFET GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF918DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER .