SiZF906DT - Vishay

SiZF906DT Dual N-Channel MOSFET

www.vishay.com SiZF906DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.00380 at VGS = 10 V 0.00530 at VGS = 4.5 V 0.00117 at VGS = 10 V 0.00158 at VGS = 4.5 V ID (A) 60 a 60 a 60 a 60 a Qg (TYP.) 11 nC 46 nC FEATURES • TrenchFET® Gen IV power MOSFET • SkyF.

Features

• TrenchFET® Gen IV power MOSFET
• SkyFET® low-side MOSFET with integrated Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Ordering Information: SiZF906DT-T1-GE3 (lead (Pb)-free and halogen-free) APPLICATIONS
• CPU core power N-Channel 1 MOSFET
• Computer / server peripherals GHS/G1
• POL G1Return/S1
• Synchronous buck converter
• Telecom DC/DC GLS/G2 N-Channel 2 MOSFET VIN/D1 VSW/S1-D2 Schottky Diode GND/S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHA.