SiZ260DT - Vishay

SiZ260DT Dual N-Channel MOSFET

www.vishay.com SiZ260DT Vishay Siliconix Dual N-Channel 80 V (D-S) MOSFETs PowerPAIR® 3 x 3S S2 5 S2 6 S2 7 G2 8 S(P1/iDn 2 9) D1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 4 D1 3 D1 2 D1 1 G1 Bottom View CHANNEL-1 CHANNEL-2 80 80 0.

Features

• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Integrated MOSFET half bridge power stage
• Optimized Qgs/Qgs ratio improves switching characteristics
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• POL
• Synchronous buck converter
• Telecom DC/DC
• Resonant converters
• Motor drive control D1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3S SiZ260DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER S.