SiZF5300DT - Vishay

SiZF5300DT Dual N-Channel MOSFET

www.vishay.com SiZF5300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET 3.3 mm PowerPAIR® 3 x 3FS V+ V+ LSG 3 4 GND 2 5 1 6 V+ 1 3.3 mm Top View GND 12 11 7 8 HSG 9 SW 10 SW SW Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 30 0.00243 0.00351 9.5 125 .

Features

• TrenchFET® Gen V power MOSFET
• Symmetric dual N-channel
• Flip chip technology optimal thermal design
• High side and low side MOSFETs form optimized combination for 50 % duty cycle
• Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous buck
• Computer / server peripherals
• Half bridge
• POL
• Telecom DC/DC V+ HSG N-Channel 1 MOSFET SW LSG N-Channel 2 MOSFET GND ORDERING INFORMATION Package Lead (Pb)-free .